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Product Description
Sirenza Microdevices' SDM-08060-B1F 65W power module is a robust, impedance matched, single-stage, push-pull Class AB amplifier module suitable for use as a power amplifier driver or output stage. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. It is a drop-in, no-tune solution for high power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms.
SDM-08060-B1F SDM-08060-B1FY
869-894 MHz Class AB 65W Power Amplifier Module
Pb
RoHS Compliant
& Green Package
Functional Block Diagram
+3V DC to +6 V DC +28V DC
Vgs
1
Vds1 180 Gnd Balun RFin Balun RF out
o
0
o
Gnd
Product Features
Gnd 0
o
Gnd 180
o
Vgs 2
+3V DC to +6 V DC
+28V DC
Vds 2
* * * * * * * * * * *
Available in RoHS compliant packaging 50 W RF impedance 65W Output P1dB Single Supply Operation : Nominally 28V High Gain: 17 dB at 880 MHz High Efficiency: 46% at 880 MHz ESD Protection: JEDEC Class 2 (2000V HBM)
Applications
Case Flange = Ground Base Station PA driver Repeater CDMA GSM / EDGE
Units MHz W dB dB % % dB dBc nS Deg C/W Min. 869 60 16 32 Typ. 65 17 0.3 34 46 -15 -31 4.0 0.5 1.5 Max. 894 0.5 -10 -28 -
Key Specifications
Symbol Frequency P1dB Gain Gain Flatness Efficiency Efficiency IRL IMD Delay Phase Linearity RTH Parameter Frequency of Operation Output Power at 1dB Compression, 881 MHz
Gain at 12W CDMA Output (Single Carrier IS-95), 881MHz Peak to Peak Gain Variation, 869 - 894MHz Drain Efficiency at 60W PEP, 880MHz and 881MHz Drain Efficiency at 60W CW, 880MHz Input Return Loss 12W CW Output Power, 869 - 894MHz 3rd Order IMD Product, 60W PEP, 880MHz and 881MHz Signal Delay from Pin 3 to Pin 8 Deviation from Linear Phase (Peak to Peak) Thermal Resistance (Junction to Case)
T Test Conditions Zin = Zout = 50, VDD = 28.0V, IDQ1 = IDQ2 =300mA TFlange = 25C
Quality Specifications
Parameter ESD Rating MTTF Description Human Body Model 200oC Channel Unit Volts Hours Typical 2000 1.2 X 106
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court, Broomfield, CO 80021
Phone: (800) SMI-MMIC 1
http://www.sirenza.com EDS-104208 Rev F
SDM-08060-B1F 869-894 MHz 65W Power Amp Module
Pin Description
Pin # 1 2,4,7,9 3 5 6 8 10 Flange Function VGS1 Ground RF Input VGS2 VD2 RF Output VD1 Ground Description LDMOS FET Q1 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4 Module Topside ground. Internally DC blocked LDMOS FET Q2 gate bias. VGSTH 3.0 to 5.0 VDC. See Notes 2, 3 and 4 LDMOS FET Q2 drain bias. See Note 1. Internally DC blocked LDMOS FET Q1 drain bias. See Note 1. Baseplate provides electrical ground and a thermal transfer path for the device. Proper mounting assures optimal performance and the highest reliability. See Sirenza applications note AN-054 Detailed Installation Instructions for Power Modules.
Simplified Device Schematic
1 2 3 4 5 Case Flange = Ground
Q2
10
Q1
9 8 7 6
Note 1: Internal RF decoupling is included on all bias leads. No additional bypass elements are required, however some applications may require energy storage on the VD leads to accommodate modulated signals. Note 2: Gate voltage must be applied to VGS leads simultaneously with or after application of drain voltage to prevent potentially destructive oscillations. Bias voltages should never be applied to a module unless it is properly terminated on both input and output. Note 3: The required VGS corresponding to a specific IDQ will vary from module to module and may differ between VGS1 and VGS2 on the same module by as much as 0.10 volts due to the normal die-to-die variation in threshold voltage. LDMOS transistors. Note 4: The threshold voltage (VGSTH) of LDMOS transistors varies with device temperature. External temperature compensation may be required. See Sirenza application notes AN-067 LDMOS Bias Temperature Compensation. Note 5: This module was designed to have it's leads hand soldered to an adjacent PCB. The maximum soldering iron tip temperature should not exceed 700 F, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. Refer to app note AN054 (www.sirenza.com) for further installation instructions.
Absolute Maximum Ratings
Parameters Drain Voltage (VDD) RF Input Power Load Impedance for Continuous Operation Without Damage Control (Gate) Voltage, VDD = 0 VDC Output Device Channel Temperature Operating Temperature Range Storage Temperature Range Value 35 +37 5:1 15 +200 -20 to +90 -40 to +100 Unit V dBm VSWR V C C C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation see typical setup values specified in the table on page one.
Caution: ESD Sensitive
Appropriate precaution in handling, packaging and testing devices must be observed.
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 2
http://www.sirenza.com EDS-104208 Rev F
SDM-08060-B1F 869-894 MHz 65W Power Amp Module
Typical Performance Curves
2 Tone Gain, Efficiency, IMDs, IRL vs Frequency Vdd=28V, Idq=600mA, Pout=60W PEP, Delta F=1 MHz 40 35 Gain (dB), Efficiency (%) 30 25 20 15 10 5 0 850 860 870 880 890 900 Frequency (MHz) Gain IMD3 IMD7 Efficiency IMD5 IRL -10 -20 IMD (dBc), IRL (dB) -30 -40 -50 -60 -70 -80 -90 910
Gain (dB), Efficiency (%) 45 40 35 30 25 20 15 10 5 0 0 20 40 Pout (W PEP) 60 80
2 Tone Gain, Efficiency, IMDs vs Pout Vdd=28V, Idq=600mA, Freq=881 MHz, Delta F=1 MHz Gain IMD3 IMD7 Efficiency IMD5
-25 -30 -35 -40 -45 -50 -55 -60 -65 -70 IMD (dBc)
CW Gain, Efficiency, IRL vs Frequency Vdd=28V, Idq=600mA, Pout=60W 50 45 Gain (dB), Efficiency (%) 40 35 30 25 20 15 10 5 0 850 860 870 880 890 900 Frequency (MHz) Gain Efficiency IRL 0 -2 -4 -6 IRL (dB) -8 -10 -12 -14 -16 -18 -20 910
Gain (dB) 20 19 18 17 16 15 14 13 12 11 10 9 8 0
CW Gain, Efficiency vs Pout Vdd=28V, Idq=600mA, Freq=881 MHz 60 55 50 45 35 30 25 20 15 10 5 0 20 40 Pout (W) 60 80 Efficiency (%) 40
Gain Efficiency
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 3
http://www.sirenza.com EDS-104208 Rev F
SDM-08060-B1F 869-894 MHz 65W Power Amp Module
Typical Performance Curves (cont'd)
Two Tone Gain, Efficiency, IRL, IMDs vs Supply Voltage Pout=60W PEP, Idq=600mA, Freq=881 MHz, Delta F=1 MHz Gain IRL IM5 Efficiency IM3 IM7
CW Gain, Efficiency, IRL vs Supply Voltage Pout=60W, Idq=600mA, Freq=881 MHz
0 -10 -20 -30 -40 -50 -60 -70
Gain (dB), Efficiency (%) 70 60
70 60 Gain (dB), Efficiency (%) 50 40 30 20 10 0
Gain Efficiency IRL
0 -5 -10 -15 -20 -25 -30 -35 IRL (dB)
IRL (dB), IMD (dBc)
50 40 30 20 10 0 18 20 22 24 Vds (Volts) 26 28 30
19
20
21
22
23
24
25
26
27
28
29
30
Vds (Volts)
CW Gain vs Pout for various Idq Vds=28V, Freq=881 MHz 19
-20 -25
IMD3 vs Pout for various Idq Vds=28V, Freq=881 MHz, Delta F=1 MHz
18.5
Idq=1.6A Idq=1.4A Idq=1.2A
Gain (dB) -30 -35 -40 -45 -50 Idq=0.7A -55 Idq=0.4A Idq=0.5A Idq=0.6A Idq= 0.8A
18 Gain (dB)
Idq=1.0A 17.5 Idq=0.8A 17
16.5
16 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 Pout (W)
-60 0 5 10 15 20 25 30 35 40 45 50 55 60 65 Pout (W)
Note: Evaluation test fixture information available on Sirenza Website, referred to as SDM-EVAL.
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 4
http://www.sirenza.com EDS-104208 Rev F
SDM-08060-B1F 869-894 MHz 65W Power Amp Module
Package Outline Drawing
Note: Refer to Application note AN054, "Detailed Installation Instructions for Power Modules" for detailed mounting information.
303 S. Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC 5
http://www.sirenza.com EDS-104208 Rev F

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